WH Integrated circuit

oT: t[STwEBLyfBAiWikipediajx Source: Wikipedia, the free encyclopedia (Wikipedia),

LSI]B LSI to the items are transferred. LSIR[|[VAGEt}yGEt}B For a company LSI Corporation, Ellen stringed instrument about the length of the invention FURUMAN FURUMAN Ellen please.

SOPpbP[WWWbNIC SOP inclusion in the package is an example of a standard logic IC

WH iAIntegrated CircuitA IC jAG@\AfqdqiB IC (integrated circuit, Integrated Circuit, IC), the specific function of the complex to summarize in one of a number of electronic parts and devices. \dqH[q^pbP[WB Mainly semiconductor consists of an electronic circuit with multiple terminals in a small package is the inclusion.

[ W ] Tv Summary

dq@gpdqHAZ@\PH\ARRfTAgWX^1gAAAB The electronic equipment used in modern electronic circuits, amplifiers and instruments, such as arithmetic functions in the unit have already decided the circuit configuration, and the individual bother Capacitors and resistors, transistors to build one at a time, efficiency, bulkiness, The cause of the failure. GHZpWHARs[^fW^@xvwZpB Complex circuitry into a small piece of semiconductor technology into the building and the performance of integrated circuits, computers and digital devices now support one of the major science and technology. H ( Solid-State Circuit )A20Il~AZpi}HK\B Solid-State Circuits is the oldest (Solid-State Circuit), also known as the mid-20th century and later been devised and manufactured by the rapid advances in technology and performance of the circuit has been improved.

EFn[fqzw^ZpA}XNnh10`10JA1_CiDiejB Semiconductor wafer thin board called on the fine wiring devices and optical and photographic techniques to statues included a copy of the statue as a protective mask and semiconductor substrates dissolved and the top coat 10 to 10 times over a single die (Die) to build. _CEFn[10`100AieXgO1B To die on the wafer is the same number 10 to number 100 that has been created around the test-quality product cut off one by one. iTuXg[g[hEt[A{fBOEC[tbv`bvO[qzsAvX`bNZ~bNAopbP[WAeXgoB Lead frame, a sub-quality product and put it on the straight and direct flip chip and wire bonding connection with the external wiring at the terminal, and then the plastic or ceramic, metal cans are made of inclusion in the package, after the test Will be shipped. mVbNWHTAnCubhWHA_C1_CPig1pbP[WB Manufacturing more than a summary of the monolithic integrated circuit, but the hybrid integrated circuit, one of several die and die or some combination of stand-alone passive components such as the one that was included in the package.

WHAgWX^ARARfTARCPiufBXN[gvB Integrated circuits, transistors, resistors, capacitors, coils and other parts of the stand-alone "discreet".

[ W ] j History

[ W ] ICa IC's birthday

WHl[_[wWFt[E_}[i1909NjB Invented the first integrated circuits in the Kubu radar scientist Jeffrey (born 1909). ph[_[{A1952N57VgDCACfA\B He radar facility in the UK Royal work of the Department of Defense 1952 on May 7 in Washington, DC said the idea. A_}[1956NAHsB However, the Kubu in 1956, that failed to make the circuit.

WHlwXB In fact, the first integrated circuit of the two scientists made separately. eLTXECXccWbNELr[Q}jE"Solid Circuit"1959N26oALr[1964N6t^^[1] B Texas Instruments Jack Kilby made of a germanium "Solid Circuit" about the 1959 patent application on February 6, Kilby side in 1964 was granted in June ^[1]. tFA`ChZ~R_N^[o[gEmCXVRG"unitary circuit"1961N425^B On the other hand FEACHAIRUDOSEMIKONDAKUTA Robert Noyce made of silicon more complex "unitary circuit" in 1961 concerning patents granted on April 25.

DLB The second committee's priority in a patent or whether the patent is valid struggle. _ALr[WHefqzB The issue of the Kilby patent in the integrated circuit in the wiring connected to each element. Lr[AfqzQ}jEB Kilby patent, the element germanium connecting wires from the floating board was flying in the air. mCXzVRvgAWH\B But in Noyce's patent on a silicon substrate, printed wiring is the same as the current structure of the integrated circuit. Lr[o10N10oAmCXmB Kilby patent dispute in the 10 years from the end after 10 months, has confirmed the victory of Noyce. AB But the victory did not mean the most. 1966NAeLTXECXcctFA`ChZ~R_N^[\GNgjNXWHCZX^BB In 1966, Texas Instruments and several FEACHAIRUDOSEMIKONDAKUTA companies, including integrated circuits electronics companies about licensing agreement was reached.

Lr[mCXAh_ASh_aB Kilby and Noyce later, after both the People's Honor Award, in honor of the National Inventors Hall of Fame said.

[ W ] SSIAMSIALSI SSI, MSI, LSI

WHgWX^WB Only a fraction of the initial integrated circuits and transistors are integrated. SSIB This is called SSI. SSIqFvWFNgdAWB SSI in the prized project in the field of aerospace has been developed by it. ~jbg}~TCA|vq@pvZ@yEfW^Rs[^KvB MINITTOMANMISAIRU and the Apollo program as a calculator for inertial navigation light. Requires a digital computer. A|URs[^WHZpi^A~jbg}~TCYZp^B Apollo guidance computer integrated circuit technology will contribute to the evolution and the MINITTOMANMISAIRU contribute to the advancement of technology for mass production. v1960N1963NYICSB The plan produced from 1960 to 1963 bought nearly all of the IC. Zpii401AOvB This production technology to increase product prices by 40 to one, otherwise it will demand to be born.

iKMSI1960NIoB The next step is the MSI appeared in the late 1960s. SSIriAGVXeYHgRXgX_B SSI, in comparison to the high prices, but more complex systems to produce smaller circuit board assembly and a number of cost advantages and charm. oI_LSI1970NJB Such economic benefits of the LSI also will be developed in the mid-1970s. LSIRs[^CdiYB The computer's main memory and LSI parts calculator to be a large-scale production.

[ W ] VLSI VLSI

1980NVLSI (Very Large Scale Integration) JnB In the 1980s, and VLSI (Very Large Scale Integration) begin to be developed. CPU}CNvZbTSWHB This CPU and the microprocessor on the whole in a single integrated circuit to be produced. 1986NA1KrbgRAMoB In 1986, the first 1-megabit RAM appeared. 100gWX^WB It has 100 million transistors are integrated. 1994N}CNvZbT300gWX^WB The microprocessor in 1994, produced more than 300 million transistors are integrated. VLSI`bvCMOSZpv[KiZpLyB VLSI chip CMOS technology in the design of standardized rules widely used by the manufacturing technology.

[ W ] ULSIAWSIASOC ULSI, WSI, SOC

G\tULSI (Ultra-Large Scale Integration)AVLSIULSIZpIB As a further term of complex ULSI (Ultra-Large Scale Integration) have been proposed, VLSI and ULSI technological leap between what is not. Pi}[PeBOj`bvGULSIpgB Just (on marketing) to the complexity of chips if you want to emphasize that the term is used in the ULSI. WZpWSI (wafer-scale integration)B As the best integration of the WSI (wafer-scale integration) said. Rs[^SivZbTjfEFn[WB The entire computer (multiple processors and memory) are not disconnected to be integrated on a wafer. 1980N@psB In the 1980s, this approach was actually trying to commercialize has failed. sgWX^[Si_B The main reason for zero defects in the transistors to hold the product and did not complete the work. AWSIpDxB And, of WSI currently a high priority for practical use. WSIIsAZpiVSoC (System-on-Chip) B WSI is a commercial failure, but by advances in semiconductor technology to a new SoC (System-on-Chip) that has been trying to be. Av[`A]X`bv\R|[lgWHB This approach, which consists of different chip components have been put in one of the integrated circuit. A}CNvZbT@C^[tF[XI/Of[^`bvWB For example, memory and microprocessor and peripheral interfaces and I / O and control and data conversion to a single chip.

AEGn[XP[`bvuzi1`2vprB In addition, the UEHASUKERUCHIPPU "high-quality product, even one or two good at itRERE" well in the application. YlHqV]C[WOfqEGndfqB Not the same thing for the mass production of artificial satellites and astronomical telescope observations of the surface of the wafer in the imaging device without a gap in the photoelectric elements are made of apples. fqcfbgAbgduB Multiple devices together to create a gap and a distortion CONS that arises, be able to resolve it is placed high value on the benefits. `bv1iJA}XNROMC1bg1000`2000~AB The price of a single chip plant now has not been made public, as an example of a mask ROM chip production line in order to move a lot minutes 1000-20000000 yen from such things, things that exceed going to be very expensive .

[ W ] Hv Circuit Design

WHvQ Integrated circuit design reference

[ W ] manufacture

AEGnH`OHAEGn_CfApbP[WIsHB Semiconductor Manufacturing, the wafer to form on the front-end circuitry, so the die was designed to cut the wafer, with packages after the final inspection process will be greatly divided.

[ W ] EGn wafer production

WHEGnAB To be the mother of integrated circuit wafer materials and raw materials, with the nature of the semiconductor material. IWHVRAgHXCb`O\KEqf AdHQ}jEpB In general, most of them integrated circuit silicon is a high frequency, high-speed circuit switching can be a gallium arsenide, low-voltage circuits to create an easy-to high-speed germanium also be used.

WHRXgAEGnPCSbgxAaEB The yield and the cost of integrated circuits, the wafer is a single crystal ingot in the purity of raw materials, height and crystal defects of the few, and the diameter will be greatly affected. 2007NEGna300mmBB By the end of 2007 has a diameter of 300mm wafers reach. CSbgTCYA]Zp[J[B To increase the size of the ingot, the only existing technology to reduce defects in the most difficult things to all manufacturers ofKITATTA time was on the wall. VRPu`AnZVR~P\B Melting pot of single-crystal silicon device to raise the superconducting magnets included in the siege, the convection of molten silicon in a powerful magnetic field to stop the low-single-crystal defects can be manufactured.

[ W ] OH front-end

OHHoEGnB Wafer made by front-end circuit.

OHAvHCAEg]EGnWHHB Before the process, created by designers in accordance with the layout of the circuit on the wafer into the process of making integrated circuits. wZpAHZpA^ZpAvHwAvY}HwAlZpA@HwAqwARs[^EvO~OAHwZp\B Optical technology, precision processing technology, vacuum technology, engineering statistics, plasma engineering, and unmanned technology, micro-fiber technology, polymer chemistry, computer programming, environmental engineering and technology will be wide-ranging.

[ W ] \ Surface Treatment

WH\e\{B A variety of semiconductor integrated circuits on the surface of the surface of the manufacturing process will be more. EGnCIh[vAsZx[usiwQ[gWHjB First, the wafer ion implantation doping substances by injection, would increase the concentration of impurities will be held (the first layer is made of the gate will be the center of integrated circuits). SOIEGnwRdusB In addition SOI wafers in the insulating layer, or glue together to get burnt by the leakage current pin action. WXghzAXebp[IAWXgsAH\VRA CIh[vAQ[gzyAXpb^OzAGb`Osvsi tHg\OtB jB And the film resist coating, exposure of steppers, multi-processing operations and resist by the time the mother of a circuit structure and deposition of silicon, ion implantation doping substances by injection, the gate will be the cornerstone of wiring and insulation film. Generation, metal wiring by sputtering, etching and removal of the unwanted part (photolithography). WHIGzw4w^E6w^\B Three-dimensional integrated circuits and wiring layer of complexity to count the number of four-layer in the Metalgun 6 layers of metal and expression. \Zpis`AHigh-KAYA^Q[gA fqVZp\B This surface treatment technology is ongoing, High-K Dielectrics, additive injection, metal gate, nitride semiconductors and other new technologies have been released. VZpAvZXE[oB This new technology, the process of scaling the world with rules are told to leave.

[ W ] N[[ Clean Room

HYCAN[[B In the semiconductor factory production line, itself a giant clean room said. wIN[[AyxB Rather than biological clean room, semiconductor manufacturing sites much more likely to cleanliness. EGn1EgWX^100BB One of the wafer on the transistors of the 100 bacterial cells near the obscure. 2008N[vZXE[45 nmECXB 2008 is now the rule advanced process of 45 nm size of the virus is the following. ligEAZACMOS gWX^vIB The semiconductor manufacturing is a human being anywhere in the environment of sodium very weak, but in order to penetrate the insulating layer, especially CMOS transistors can be fatal. HN[[CAN[xAxHEPAtB^[ULPAtB^[qhgB In the semiconductor factory will be introduced to clean the air in the room, each room has been set and a clean place at a time, depending on many HEPA filters and ULPA filters for particulates in the air filter was used to be taken. CItB^[ClqOIgpB The water ion exchange resins as well as water and the air filter out particles were removed using ultra-pure water. igEApEjAUlvZXQOAN[X[cAgFhCB Including large amounts of sodium, and skin cells from the skin of a large amount of falling debris and human body vibration lead to a process for semiconductors disserve anything other than, clean suits, the so-called "space suit" and wearing a production line To avoid contamination. HxAlCo@BguB The most highly automated factory has a production line of people go to the trouble of the mechanical failure was the only time.

[ W ] EGneXg wafer test

EGnH`A upH@\mFEGneXgsB Formation of the circuit on the wafer is complete, semiconductor test equipment using the normal functioning of the circuit to determine whether the test wafer. xEAsB Operating characteristics of semiconductor depends on the temperature, because the temperatures below normal temperatures in addition to the exam will be held.

EGneXg_C}[LOAqHi}[N_CgB To die of wafer marking the test results will be below the mark and after the process was a die-quality product and assemble only the target.

[ W ] ~ remedy defects

_CKWHA`bviB Die large area in very large scale integrated circuit chips on a single product defect is not perfect is very difficult to make. AviK\HOAEGneXgso\H~sB So, in the preliminary design stage to add in advance of the circuit, wafer test when the defect was detected in supplement to be there in the secondary circuit will help raise the yield. HAH`q[YEGneXgdCIfB Circuit switching the circuit was formed on the wafer test a fuse in the electrical and to be able to disconnect.

DRAMtbVAie\pAseXg_zq[Y\sB DRAM and flash memory products, in addition to a preliminary set of memory capacity available, and every region, where tests found a bad point cut in the reserve area in the wiring to switch to a fuse that will be held. A CellSynergistic Processor ElementZH8A PS3gp\Synagistic Processor Element7B In addition, Cell in the Synergistic Processor Element circuit called the eight operations have been mounted, PS3 is available in seven Synagistic Processor Element is set. AsRA_C~p\AB In this case, one bad core in the die caused by a defect can be used for relief and improved yield.

[ W ] H after the process

OHi}[LOHEGnoAV[g\tpbP[WB Marking process as a quality product before the circuit wafer is cut from the sheet with paste in the package. [qz~AIi`B Pin and sealed with plastic wire and~SHI, in the shape of the final product. Asoo[Ci@\mFt@CieXgooB After the initial bad burn and burn-in test to determine the function of product through the final test will be shipped.

[ W ] _CVO Dicing

_CVOQ For details, dicing see

_CVOHAOHEGn`bv`B In the dicing process, the wafer manufacturing process before the chip in the form of separating. _CVOAupf@A[U[p@B Dicing the thin wheel with a way to disconnect, and how to use a laser is the mainstream.

[ W ] {fBO bonding

C[{fBO}B Figure of wire bonding. pbP[W[q[ht[`bv[q{fBOC[B Lead frame package and is pin to pin of the chip is connected by wire bonding.

tbv`bv{fBO}B Figure of flip-chip bonding. `bvANovB Are floating on a chip, which is attached to the bumping process is circular. `bvtpbP[WAlpovB Under the package of chips mounted on board, part of the square is lined with bumps on the surface of the junction.

`bvpbP[WA`bv[qpbP[W[qH{fBOB Mounted on a package of chips and circuit boards, chip and package-side terminals to connect the terminal and called bonding process. {fBO@B The main method of bonding below.

C[{fBO Wire bondability

`bv[q{fBOpbhpbP[W[q@B BONDINGUPADDO terminal on the chip and package is a thin metal pin to connect the line. HedCRAA~jEpB And the ease of processing the low level of electrical resistance, and materials to the gold and aluminum are used frequently.

tbv`bv{fBO Flip-chip bonding

`bvovpNApbP[W@B Bumps on the chip process known as the place for connection to the package substrate surface to connect to. `bvSgA[q`bvWHpB Because the chip can be used to connect all the terminals and the number of integrated circuit chips in a small area is used frequently.

[ W ] ~ Encapsulation

{fBOzAOWH~sB Once completed by bonding wires, and moisture from the outside from the shock of the integrated circuit to protect the sealing. IWHAMd`bv{fBOC[o`sB In general, integrated circuits, chips and heat-curing resin to protect the wire bonding injection molding. WHOB The black appearance of the integrated circuit is due to the resin. A`bvWHB After the solidified resin, itRISE every integrated circuit chip is to be completed.

[ W ] o[C burn-in

oX^uJ[uOtB BASUTABUKABU graph. sOtAsoAslqB The blue graph showing the incidence of bad, bad initial period after the high failure rate, failure rate shows during the transition.

WHIoX^uJ[umz]B The failure rate for integrated circuits in general BASUTABUKABU follow-called probability distribution. oX^uJ[uAgpJnssoAssB BASUTABUKABU a bad use of higher rates after an initial period of bad, bad rates to maintain a low failure rate in the transition period. ZWHsoHo[CB Accelerate the deterioration of conditions in the short run integrated circuits that bad this early in the barn burn-in process. o[CosiB Byrne was in a defective stove in the quality of the next test will be removed.

IAWHdB Specifically, the high temperature integrated circuits under a certain amount of time that the current deterioration is accelerating. AwAxxAjEXW]lB The case captured degradation as a chemical reaction, temperature and speed of degradation of the Arrhenius equation and the concept of the relationship is due to follow.

[ W ] i Quality Inspection

AWHi@\mFsB Finally, the integrated circuit to function properly as a product to determine whether the tests. ~A[ht[BGApbP[W{[[qmFOA{fBOdCmsA`bvSumFdCsB And the lack of sealing cracks in the plastic lead frame and the BGA package to pin the ball to make sure there are no abnormal visual inspection, by bonding to ensure the electrical connection, the chip can operate fully in the semiconductor test equipment check Tests carried out to be electric.

[ W ] vO Programming

EEPROMtbVLfqiAvOsB EEPROM and Flash memory devices and embedded memory products of the work program will be writing to them. vOeA}XNO[ho[qWHoB To switch the contents of the program, the mask from the same terminal in different grades and differentocan produce integrated circuits. CPUiA\xNbN{AO[hiYCB The products, such as CPU, the actual work according to a top speed of the clock can be set in post-magnification, and different grades of products manufactured from the same production line.

[ W ] vZXE[ process rules

vZXE[AWHEGnvZXAH@p\B Rules and processes, integrated circuit wafer fabrication process in good condition, with dimensions represent the minimum processing. vZXE[AHvfqz@KfUCE[B By the rules process, circuit design and wiring in the dimensions of the device design rules that will govern.

AH@Q[gzuB Usually, the minimum processing dimensions or the width of the gate wiring interval. Q[gzA _dEgWX^(MOSFET)Q[gZA\[XhCuZA`lRB If the narrow width of the gate wiring, metal-oxide field-effect transistor (MOSFET) will have a shorter length of the gate, the shorter the interval between the source and drain, and reduced channel resistance. AgWX^dAB Thus, increases transistor drive current, high-speed operation can be expected. AvZXE[AA Q[gwB Therefore, the process rules, is expected to speed up the gate length can also point to the case. DRAMvZXAQ[gQ[gz@gAgUw^wR^NgaH@B DRAM process, in particular, the gate length of the gate wiring unless you have a minimum size, the diffusion layer and contact metal layer to the continuity of the minimum size dimensions may be processed. AvZXE[AZpIxwWB In other words, the process rules, advanced manufacturing and technical indicators that can be difficult.

vZXE[A_COzA4{gWX^zzuAgWX^41B If the rules process in half, except for the die part of the external wiring, in the same area four times that of the transistors and wiring can be placed, the number of transistors in the same quarter in the area. _C41k1EGn_C4{AP_CB Die reduced to one-fourth of the area would die off from a single wafer will be four times as well as improved yield many more to be able to die. gWX^fqMOSFET`lZAON/OFFldiVthjdXCb`O\A [NdlAd\B If the MOSFET transistors smaller element of the channel length shortens, ON / OFF threshold voltage (Vth) on the down low voltage and high-speed switching operation, and leakage to think of the problem, the current consumption To improve performance while lowering.

vZXE[A }XNEGnH]Iuw\AGb`OH@PXVB Process rules, the masks transcribed from the wafer circuit in the semiconductor lithography equipment and optical resolution, the etching process and the improvement of the dimensions of difference in conversion has been updated. vZXE[\A [A@pB Process rules for the future, Moore's Law is often cited.

IuHxvAlsB Exposure semiconductor equipment demand very high accuracy is working, the majority of production will be held in a human hand. EGnXChe[uAxLuEl[B Slide wafer table put a high degree of horizontal in order to achieve a very fine abrasive KIME craftsmen honed in on a rail ride. p^[EGn]wnAqP\CxYpB Transcription of fine patterns on the wafer in the optical system, the curvature of the surface atoms in the unit is fixed by ultra-high-precision lens is used.

[ W ] miniaturization

Iu[J[12[[J[XIuJA[J[B Semiconductor equipment maker exposure one or two of the leading semiconductor manufacturers in conjunction with the next generation and the next generation and the development of the semiconductor lithography equipment, first for the manufacture of semiconductor manufacturers. JouA2`3Nx[[J[Yw[[J[^pB The system created by the development, about two to three years after the mass production of advanced semiconductor manufacturers continue to buy time for cutting-edge semiconductor manufacturers in the first generation of the start of the trial. z90nmA65nmA45nmlB Because of this circular to 90nm, 65nm, 45nm and will be flying to the value of the jump is normal. 2007N_[vZXE[45nmB^[2] B At the time of the 2007 rules for the process leading 45nm has been reached ^[2].

DRAMtbVvZX[kB DRAM and flash memory on the rules process to shrink little by little. DRAMvZXE[2007N65nmA2008N57nmksA2013N32nmzB The minimum rules in the process of DRAM in 2007 and 65nm, 2008 and down from the 57nm and 32nm in 2013 is assumed. Ai}ie[J[VKTAPY_^[3] B This is the product of the rapid low-cost investment in new depending on the manufacturer, depending on the improvement of existing facilities to improve productivity is the goal ^[3].

vZX[ggZA}XN`EGnHAvH`B Rather than the rule refinement process is used by a light source to be shorter than the wavelength of light diffraction and interference with the shape of the mask is made on the image of the wafer increases the difference in the design of the street circuit will not be formed. AHvwDw130nm[sB To solve this problem, circuit design, optical effects of these pre-set by incorporating a 130nm optical proximity correction will be held following the rules. wA EDAyB The optical proximity correction, EDA and the spread of automation.

[ W ] yield

AEGnS_Ci_CwAC[hE[g (yield rate) B Yields a wafer-quality product from a win for all the die refers to the percentage of the die, the yield rate (yield rate) is also called. PCpCPUAYCHoiAieXgO[hUAO[hB As for PC's CPU, the same production line as products through the manufacturing process, and finished product testing from grade to be typecast, so itGERE upgrade will result in increase in yield.

[ W ] Classification

[ W ] VXe\ System Configuration

[ W ] mVbNWH monolithic integrated circuit

CAN`IC CAN-shaped IC's internal

mVbNWHimonolithic ICj1A gWX^ A _CI[h A RHfq`AfqA~jEzAmm`10mmpoB Monolithic integrated circuit (monolithic IC) on a single semiconductor substrate, transistors, diodes, resistors and other elements to form the circuit, the device between the aluminum deposition and the wiring, after a few mm ~ 10 mm square of the number of A small piece of the deal. gHB Fewer man-hours is cheaper to assemble.

VR iSiA]fj P\gWX^iv[i^gWX^jWB Silicon (Si, silicon) single-crystal flat-shaped configuration on board the transistor (planar transistor) is a development. vZXi1990NAiOEfW^HpB By advances in manufacturing processes from the 1990s, mixed analog-digital circuits can be also used.

[ W ] nCubhWH hybrid integrated circuits

}``bvW[AB Both eProx good, has a built-in semiconductor substrates. gHiB Many man-hours to assemble a rise in prices. vZXgpfqAIzu\B Using a different manufacturing process can be equipped with devices, semiconductors and circuit boards placed in the implementation of three-dimensional space can be reduced.

vgZppAZ~bNG|LVzp^[`AigWX^ARA RfTcti nCubhWHjAzi}``bvW[jB Printed circuit board manufacturing technology, ceramic substrate on a circuit board and epoxy resin to form a pattern of the individual components of the transistors, resistors, capacitors and are soldered to make (hybrid integrated circuits) and several metal semiconductor substrates Wiring is directly in line (eProx).

HdHXCb`OHiCeWFgp[W[jAxvg@EEq@ERpAWHmZxe^X[p[ERs[^Ct[ERs[^pB The integrated control circuit of high-power amplifier circuit and switching circuit (INTERIJENTOPAWAMOJURU), and high-density devices will be prompted to Implement Motor aircraft for military use, the distance between integrated circuits in the speed of operation Give a super-computer and mainframe computers to be used. Ct[ERs[^X[p[ERs[^g}``bvW[100wZ~bNxH\B Super-computer and mainframe computers used by more than 100 layers eProx the sintered ceramic substrate to generate a very sophisticated three-dimensional configuration of the circuit. vgrhAbvAw\H\ZpJAnCubhWHwivgwiB Printed circuit board, called build-up in several multi-layer circuit boards and Paste the lather to configure a circuit technology has been developed for hybrid integrated circuits and multi-product and multi-layer printed circuit board product line that is missing.

[ W ] Wx Density

ZpiWiWAVtAKgp@ApsB The evolution of manufacturing technology with the development of highly integrated with a new name - with the difference of scale lead to differences in methods used since it was not made increasingly out of vogue. uLSIvOgB At present, "LSI" almost non-stop is used.

[ W ] pbP[W Package

WHpbP[WA pbP[W (dqi)Q For the integrated circuit package, the package (electronic components) to see

[ W ] @\ classified by function

• pLSI General-purpose LSI
• pWbNIC General-purpose logic IC
• ASIC A VXeLSI ipr ICELSIj ASIC, system LSI (for application-specific IC LSI)
• ASSP iprWij ASSP (application-specific standard products)
• vO}uWbNfoCX - FPGA Programmable - FPGA

[ W ] ASICAVXeLSIipr ICELSIj ASIC, system LSI (for application-specific IC LSI)

• LSI Voice synthesis LSI
• LCDhCo LCD Driver

[ W ] ASSP ASSP

• fW^MvZbT (DSP) Digital signal processor (DSP)
• Rg[EGPU Image Processing Controller GPU
• LAN LAN control
• SCSI SCSI control
• fp Modem
• rfIEI[fBIEp Video and audio encoding and decoding for

[ W ] fW^pLSI LSI for digital control

• }CNvZbT Microprocessor
• }CNRg[ Microcontroller

[ W ] p general-purpose memory

• DRAM DRAM
• SRAM - ^SRAM SRAM - pseudo-SRAM
• ROM - EPROM - EEPROM ROM - EPROM - EEPROM
• tbV Flash memory
• FeRAM FeRAM

[ W ] p only memory

• FIFO FIFO Memory
• fA|[g - VRAM DYUARUPOTOMEMORI - VRAM
• LbV Cache

[ W ] AiOWH analog integrated circuit

• IyAv iZj Op amp (operational amplifier)
• AiO-fW^H Analog - digital converter circuit
• fW^-AiOH Digital - analog conversion circuit
• dH Power supply circuit
• p[Av - hCo Power amplifiers - Driver
  • pAvH Amp circuits for sound
  • tfBXvChCo LCD display driver
  • [^hCo Motor Driver
• RFH RF Circuits
• fM - NTSCM Video signal processing - NTSC signal processing
• ^C~OH - PLL - VCO Timing circuit - PLL - VCO
• ZT Semiconductor Sensor
  • CMOSC[WZT CMOS Image Sensor
  • CCDC[WZT CCD image
  • xZT Temperature sensor
  • ZT Pressure Sensors
  • xZT Accelerometer
• [ Semiconductor relay

[ W ] i composite products

• SiP SiP

[ W ] Ql References

• dq{` - rfIAyPs{B Autobiography of Japanese electronic goods - video, and a book. WlAgDVDllSKvAB Semiconductor helped reporters from several prominent people have already died, the show's DVD and all the heirs of the deceased have to get consent, was difficult.
• J[o[E~[h A EREFC wLSIVXex Y , TVB Carver Mead, Lynn Conway, Introduction to the system by the ultra-LSI Takuo Sugano, Hiroyuki Sakaki translation supervisor. | B |. 1981NB 1981. ISBN 4563031798 ISBN 4563031798
• wICKChubN —2006N— LAxx dqZpYdqfoCX ZpO[vA oBP A2006NB The IC Guide - 2006 Edition - a richer life, society, support the Semiconductor Industry Association of Electronics and Information Technology Division Electronic Devices Group of semiconductor technology, Nikkei BP, 2006 years. ISBN 4861301564 B ISBN 4861301564.

[ W ] r Footnotes

1. ^ AJO3138743 ^ The United States Patent No. 3138743
2. ^ dY (2007-06-19). " EA45im [g@VXeLSIYJn ". 2008N111 {B ^ Matsushita Electric Industrial Co., Ltd. (2007-06-19). "World's first 45-nanometer start mass production of system LSI." Viewed November 1, 2008.
3. ^oGNgjNX 2007N115uDRAMv p.63 ^ Nikkei Electronics Nov. 5, 2007, "capitalize on DRAM price" p.63

[ W ] A See also

• EDA EDA
• e[vAEg Tape Out
• ASIC ASIC
• Semiconductor memory